1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs

  • Archived
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 20 V to 50 V for Extended Power Range
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.

RF Performance Tables

Typical Pulse Performance

VDD = 50 Vdc, IDQ = 100 mA
  • Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz at all Phase Angles, 250 W Pulse Peak Power, 10% Duty Cycle, 200 µsec

Typical CW Performance

VDD = 50 Vdc, IDQ = 10 mA, TC = 61°C


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