1805-1880 MHz, 30 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

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The MD7IC18120NR1 and MD7IC18120GNR1 wideband integrated circuits are designed with on-chip matching that make them usable from 1805 to 1880 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

Data Sheet

Application Notes

Documentation

Quick reference to our documentation types.

6 documents

Compact List

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

PDFMay 12, 2004Rev 1
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

PDFOct 9, 2003Rev 0

MD7IC18120NR1, MD7IC18120GNR1 1805-1880 MHz, 30 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers[MD7IC18120N]

PDFMay 3, 2010Rev 0

98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins[SOT1725-1]

PDFMar 18, 2016Rev E
98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins[SOT1728-1]

PDFMar 18, 2016Rev E

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

Quick reference to our design files types.

5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
MD7IC18120NR1, MD7IC18120GNR1 S-Parameters

S2PRev 0May 3, 2010 00:00:0054.2 KBMD7IC18120N_SP

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Models
MD7IC18120N RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019 00:00:002.2 MBMD7IC18120N_MDL_ADS

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Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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Models
MD7IC18120N RF High-Power Model AWR Product Model Design Kit

ZIPRev 1Jul 22, 2011 00:00:003.0 MBMD7IC18120N_MDL_AWR

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Calculators
MD7IC18120NR1, MD7IC18120GNR1 RF Power Electromigration MTTF Calculation Program

XLSXRev 0Jul 19, 2011 00:00:0026.5 KBMD7IC18120N_MTTF_CALC

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1805-1880 MHz, 30 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

Documentation

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Application Note (2)

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

Data Sheet (1)

MD7IC18120NR1, MD7IC18120GNR1 1805-1880 MHz, 30 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers[MD7IC18120N]

Package Information (2)

98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins[SOT1725-1]

98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins[SOT1728-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

MD7IC18120NR1, MD7IC18120GNR1 1805-1880 MHz, 30 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

Using Data Sheet Impedances for RF LDMOS Devices

98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins

98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins

Design Resources

Design Files

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MD7IC18120NR1, MD7IC18120GNR1 S-Parameters

MD7IC18120N RF High-Power Model ADS Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

MD7IC18120N RF High-Power Model AWR Product Model Design Kit

MD7IC18120NR1, MD7IC18120GNR1 RF Power Electromigration MTTF Calculation Program

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