1805-1880 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs

MRF8S18120H
  • Archived
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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RF Performance Tables

1800 MHz

Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW
Frequency Gps
(dB)
ηD
(%)
1805 MHz18.249.8
1840 MHz18.651.4
1880 MHz18.753.9
  • Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 120 Watts CW

1800 MHz

Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 46 Watts Avg.
Frequency Gps
(dB)
ηD
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
1805 MHz17.941.0–64–761.6
1840 MHz18.241.9–63–761.7
1880 MHz18.343.2–61–762.0

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