1805-1995 MHz, 50 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

MRF8S18210WHS
  • Archived
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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RF Performance Tables

1900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 30 Volts, IDQ = 1300 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1930 MHz17.829.27.0–34.2
1960 MHz17.828.27.0–34.4
1995 MHz18.127.67.1–34.3
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 268 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 210 Watts CW

1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 30 Volts, IDQ = 1300 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz18.230.17.3–35.1
1840 MHz18.129.17.4–35.4
1880 MHz18.227.87.4–35.9

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