MHVIC2114NR2: 2100 MHz, 27 V, 23 dBm Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier ARCHIVED

Overview

The MHVIC2114NR2 wideband integrated circuit is designed for base station applications. It uses NXP^® Semiconductors's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On-Chip matching design makes it usable from 1600 to 2600 MHz. The linearity performances cover all modulation formats for cellular applications: CDMA and W-CDMA. The device is in a PFP-16 flat pack package that provides excellent thermal performance through a solderable backside contact.

Archived content is no longer updated and is made available for historical reference only.

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Features

Final Application

Typical Two–Tone Performance: V_DD = 27 Volts, I_DQ1 = 95 mA, I_DQ2 = 204 mA, I_DQ3 = 111 mA, Pout = 15 Watts PEP, Full Frequency Band
Power Gain: 32 dB

IMD: –30 dBc

Driver Application

Typical Single–Channel W–CDMA Performance: V_DD = 27 Volts, I_DQ1 = 96 mA, I_DQ2 = 204 mA, I_DQ3 = 111 mA, Pout = 23 dBm, 2110–2170 MHz, 3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz Offset, 64 DTCH, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain: 32 dB

ACPR: –58 dBc
P1dB = 14 Watts, Gain Flatness = 0.2 dB from 2110 to 2170 MHz
Capable of Handling 3:1 VSWR, @ 27 Vdc, 2140 MHz, 15 Watts CW Output Power
Characterized with Series Equivalent Large–Signal Impedance Parameters and Common Source Scattering Parameters
On–Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
Integrated Temperature Compensation with Enable/Disable Function
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

MoreLess

Features

Final Application

Typical Two–Tone Performance: V_DD = 27 Volts, I_DQ1 = 95 mA, I_DQ2 = 204 mA, I_DQ3 = 111 mA, Pout = 15 Watts PEP, Full Frequency Band
Power Gain: 32 dB

IMD: –30 dBc

Driver Application

Typical Single–Channel W–CDMA Performance: V_DD = 27 Volts, I_DQ1 = 96 mA, I_DQ2 = 204 mA, I_DQ3 = 111 mA, Pout = 23 dBm, 2110–2170 MHz, 3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz Offset, 64 DTCH, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain: 32 dB

ACPR: –58 dBc
P1dB = 14 Watts, Gain Flatness = 0.2 dB from 2110 to 2170 MHz
Capable of Handling 3:1 VSWR, @ 27 Vdc, 2140 MHz, 15 Watts CW Output Power
Characterized with Series Equivalent Large–Signal Impedance Parameters and Common Source Scattering Parameters
On–Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
Integrated Temperature Compensation with Enable/Disable Function
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

Data Sheets