MRF8S21120H: 2110-2170 MHz, 28 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs ARCHIVED

Overview

Features

NI-780, NI-780S Package Image

NI-780, NI-780S Package Image
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RF Performance Table

2000 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz17.434.66.4–37.5
2140 MHz17.534.16.5–38.0
2170 MHz17.634.06.4–37.6
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 160 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 107 Watts CW