2110-2170 MHz, 42 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

Overview

The MRF8S21172HR3 and MRF8S21172HSR3 are designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Archived content is no longer updated and is made available for historical reference only.

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Features

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Volts, I_DQ = 1350 mA, Pout = 42 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Frequency G_ps
(dB) η_D
(%) Output PAR
(dB) ACPR
(dBc)

2110 MHz 17.3 31.6 5.9 –35.8

2140 MHz 17.4 31.0 6.0 –35.9

2170 MHz 17.5 30.6 5.9 –35.0
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 193 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 1 dB Compression Point ≃ 132 Watts CW
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2110 MHz	17.3	31.6	5.9	–35.8
2140 MHz	17.4	31.0	6.0	–35.9
2170 MHz	17.5	30.6	5.9	–35.0

MoreLess

Features

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Volts, I_DQ = 1350 mA, Pout = 42 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Frequency G_ps
(dB) η_D
(%) Output PAR
(dB) ACPR
(dBc)

2110 MHz 17.3 31.6 5.9 –35.8

2140 MHz 17.4 31.0 6.0 –35.9

2170 MHz 17.5 30.6 5.9 –35.0
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 193 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 1 dB Compression Point ≃ 132 Watts CW
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2110 MHz	17.3	31.6	5.9	–35.8
2140 MHz	17.4	31.0	6.0	–35.9
2170 MHz	17.5	30.6	5.9	–35.0

Data Sheets

NI-780, NI-780S Package Image

NI-780, NI-780S Package Image

NI-780, NI-780S Package Image

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MRF8S21172H: 2110-2170 MHz, 42 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs ARCHIVED

Overview

Features

Features

NI-780, NI-780S Package Image

NI-780, NI-780S Package Image