2110-2170 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Overview

The MRF7S21210HR3 and MRF7S21210HSR3 are designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD-SCDMA, PCN-PCS/cellular radio and WLL applications.

Archived content is no longer updated and is made available for historical reference only.

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Features

Typical Single–Carrier W–CDMA Performance: V_DD = 28 Volts, I_DQ = 1400 mA, Pout = 63 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain: 18.5 dB

Drain Efficiency: 29%

Device Output Signal PAR: 5.9 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset: –33 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 190 Watts CW Output Power
Typical Pout @ 1 dB Compression Point ≃ 190 Watts CW
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

MoreLess

Features

Typical Single–Carrier W–CDMA Performance: V_DD = 28 Volts, I_DQ = 1400 mA, Pout = 63 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain: 18.5 dB

Drain Efficiency: 29%

Device Output Signal PAR: 5.9 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset: –33 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 190 Watts CW Output Power
Typical Pout @ 1 dB Compression Point ≃ 190 Watts CW
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

Data Sheets

NI-780, NI-780S Package Image

NI-780, NI-780S Package Image

NI-780, NI-780S Package Image

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MRF7S21210H: 2110-2170 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs ARCHIVED

Overview

Features

Features

NI-780, NI-780S Package Image

NI-780, NI-780S Package Image