MHVIC2115R2: 2170 MHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Wideband Integrated Power Amplifier ARCHIVED

Overview

Replaced by MHVIC2115NR2. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part.

The MHVIC2115R2 wideband integrated circuit is designed for base station applications. It uses NXP^® Semiconductors's High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On-Chip matching design makes it usable from 1600 to 2600 MHz. The linearity performances cover W–CDMA modulation formats.

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Features

	Final Application
		Typical W–CDMA Performance: –45 dBc ACPR, 2110–2170 MHz, V_DD = 27 Volts, I_DQ1 = 56 mA, I_DQ2 = 61 mA, I_DQ3 = 117 mA, Pout = 34 dBm, 3GPP Test Model 1, Measured in a 1.0 MHz BW @ 4 MHz offset, 64 DTCH
			Power Gain = 30 dB PAE = 16%
	Driver Application
		Typical W–CDMA Performance: –53 dBc ACPR, 2110–2170 MHz, V_DD = 26 Volts, I_DQ1 = 96 mA, I_DQ2 = 204 mA, I_DQ3 = 111 mA, Pout = 23 dBm, 3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz offset, 64 DTCH
			Power Gain = 34 dB
Gain Flatness = 0.3 dB from 2110–2170 MHz P1dB = 15 Watts, Gain Flatness = 0.2 dB from 2110–2170 MHz Capable of Handling 3:1 VSWR, @ 26 Vdc, 2140 MHz, 15 Watts CW Output Power Characterized with Series Equivalent Large-Signal Impedance Parameters On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) Integrated Temperature Compensation with Enable/Disable Function Integrated ESD Protection In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

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Features

	Final Application
		Typical W–CDMA Performance: –45 dBc ACPR, 2110–2170 MHz, V_DD = 27 Volts, I_DQ1 = 56 mA, I_DQ2 = 61 mA, I_DQ3 = 117 mA, Pout = 34 dBm, 3GPP Test Model 1, Measured in a 1.0 MHz BW @ 4 MHz offset, 64 DTCH
			Power Gain = 30 dB PAE = 16%
	Driver Application
		Typical W–CDMA Performance: –53 dBc ACPR, 2110–2170 MHz, V_DD = 26 Volts, I_DQ1 = 96 mA, I_DQ2 = 204 mA, I_DQ3 = 111 mA, Pout = 23 dBm, 3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz offset, 64 DTCH
			Power Gain = 34 dB
Gain Flatness = 0.3 dB from 2110–2170 MHz P1dB = 15 Watts, Gain Flatness = 0.2 dB from 2110–2170 MHz Capable of Handling 3:1 VSWR, @ 26 Vdc, 2140 MHz, 15 Watts CW Output Power Characterized with Series Equivalent Large-Signal Impedance Parameters On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) Integrated Temperature Compensation with Enable/Disable Function Integrated ESD Protection In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

Data Sheets

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PFP-16 Package Image

PFP-16 Package Image

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