MRF6S24140H|140 W CW, 2450 MHz, 28 V

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The MRF6S24140HR3 and MRF6S24140HSR3 are designed primarily for large-signal output applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific applications.

Data Sheet

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MRF6S24140HR3, MRF6S24140HSR3 2450 MHz, 140 W, 28 V CW Lateral N-Channel RF Power MOSFETs[MRF6S24140H]

PDFFeb 23, 2012Rev 4

98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins[SOT1789-1]

PDFMar 1, 2016Rev F
98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins[SOT1788-1]

PDFFeb 4, 2016Rev G

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1 design file

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
MRF6S24140H, MRF6S24140HS RF High-Power Model AWR Product Model Design Kit

ZIPRev 1Jul 22, 2011 00:00:001.4 MBMRF6S24140H_MDL_AWR

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2450 MHz, 140 W, 28 V CW Lateral N-Channel RF Power MOSFETs

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Data Sheet (1)

MRF6S24140HR3, MRF6S24140HSR3 2450 MHz, 140 W, 28 V CW Lateral N-Channel RF Power MOSFETs[MRF6S24140H]

Package Information (2)

98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins[SOT1789-1]

98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins[SOT1788-1]

MRF6S24140HR3, MRF6S24140HSR3 2450 MHz, 140 W, 28 V CW Lateral N-Channel RF Power MOSFETs

98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins

98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins

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MRF6S24140H, MRF6S24140HS RF High-Power Model AWR Product Model Design Kit

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