2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs

  • Archived
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

See product image

Product Details

Select a section:


  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Designed for Push-Pull Operation
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

Part numbers include: MRF8P29300H.

RF Performance Table

Typical Pulse Performance

VDD = 30 Volts, IDQ = 100 mA
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2900 MHz, 320 Watts Peak Power, 300 µsec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout)


Quick reference to our documentation types.

4 documents

Design Resources

Select a section:

Design Files

1-5 of 6 design files

Show All


What do you need help with?