3 W CW over 1.8-941 MHz, 7.5 V Wideband RF Power LDMOS Transistor

AFT05MS003N
  • Archived
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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Product Details

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RF Performance Tables

Wideband Performance

(7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)
Pin
(dBm)
Gps
(dB)
ηD
(%)
Pout
(W)
136-174(1,4)17.817.167.13.2
350-520(2,4)20.015.173.03.2

Narrowband Performance

(7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Pout
(W)
520(3)20.868.33.0

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(dBm)
Test
Voltage
Result
520(3)CW> 65:1
at all Phase
Angles
21.19.0No
Device
Degradation
1. Measured in 136-174 MHz VHF broadband reference circuit.
2. Measured in 350-520 MHz UHF broadband reference circuit.
3. Measured in 520 MHz narrowband production test circuit.
4. The values shown are the center band performance numbers across the indicated frequency range.

Design Resources

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Documentation

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