470-860 MHz, 600 W, 50 V Broadband RF Power LDMOS Transistors

MRFE6VP8600H
  • Archived
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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RF Performance Tables

Narrowband Performance

Typical Narrowband Performance: VDD = 50 Volts, IDQ = 1400 mA, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 7.61 MHz Signal Bandwidth @ ±4 MHz Offset with an Integration Bandwidth of 4 kHz.

Pulse Broadband Performance

Typical Pulse Broadband Performance: VDD = 50 Volts, IDQ = 1400 mA, Pulse Width = 100 µsec, Duty Cycle = 10%

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