728-960 MHz, 4.0 W Avg., 28 V CDMA, W-CDMA, LTE RF Power LDMOS Transistors

MRF8P9040N
  • Archived
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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RF Performance Tables

Driver Application — 900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
ACPR
(dBc)
920 MHz18.918.9–49.6
940 MHz19.119.5–50.1
960 MHz19.119.9–48.8
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 63 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 1 dB Compression Point 42 Watts CW

Driver Application — 700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
ACPR
(dBc)
728 MHz19.918.7–49.9
748 MHz20.119.1–50.0
768 MHz20.019.5–49.9

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