800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS Wideband Integrated Power Amplifier

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N true 0 PSPMW4IC001NR4en 1 Data Sheet Data Sheet t520 1 en_US 0 false en_US en Data Sheet Data Sheet 1 1 5 English MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses NXP<sup>&#174;</sup>. newest High Voltage (26 to 28 Volts) LDMOS IC technology. 1148685548357717617777 PSP 689.8 KB None None documents None 1148685548357717617777 /docs/en/data-sheet/MW4IC001N.pdf 689812 /docs/en/data-sheet/MW4IC001N.pdf MW4IC001N documents N 2006-06-04 MW4IC001NR4 800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS Wideband Integrated Power Amplifiers /docs/en/data-sheet/MW4IC001N.pdf /docs/en/data-sheet/MW4IC001N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf en May 26, 2006 980000996212993340 Data Sheet Y N MW4IC001NR4 800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS Wideband Integrated Power Amplifiers false 0 MW4IC001NR4 downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/MW4IC001N.pdf 2006-06-04 1148685548357717617777 PSP 1 May 26, 2006 Data Sheet MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses NXP<sup>&#174;</sup>. newest High Voltage (26 to 28 Volts) LDMOS IC technology. None /docs/en/data-sheet/MW4IC001N.pdf English documents 689812 None 980000996212993340 2022-12-07 /docs/en/data-sheet/MW4IC001N.pdf MW4IC001NR4 800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS Wideband Integrated Power Amplifiers /docs/en/data-sheet/MW4IC001N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 5 N MW4IC001NR4 800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 689.8 KB MW4IC001N N 1148685548357717617777 true Y Products

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