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864-894 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs

No Longer Manufactured

This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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The MRFE6S8046NR1 and MRFE6S8046GNR1 are designed for GSM and GSM EDGE base station applications with frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier applications.

Application Notes

Documentation

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5 documents

Compact List

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

PDFMar 12, 2009Rev 0

MRFE6S8046NR1, MRFE6S8046GNR1 864-894 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs[MRFE6S8046N]

PDFMay 6, 2009Rev 0

98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins[SOT1736-2]

PDFMar 17, 2016Rev E
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins[SOT1736-1]

PDFJan 18, 2016Rev F

Design Resources

Design Files

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