865-960 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

MRF8S9120N
  • Archived
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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RF Performance Tables

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 33 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz20.134.66.3–37.2
940 MHz20.034.36.3–37.3
960 MHz19.834.26.3–37.4
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 120 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 1 dB Compression Point 120 Watts CW

800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 33 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
865 MHz20.835.06.2–37.1
880 MHz20.835.06.2–37.5
895 MHz20.634.86.2–38.0

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