865-960 MHz, 80 W CW, 28 V GSM/EDGE RF LDMOS Wideband Integrated Amplifiers

MWE6IC9080N
  • Archived
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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RF Performance Tables

900 MHz

Typical GSM Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 80 Watts CW
Frequency Gps
(dB)
PAE
(%)
920 MHz29.049.7
940 MHz28.851.6
960 MHz28.552.3
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 128 Watts CW (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 1 mW to 80 Watts CW Pout
  • Typical Pout @ 1 dB Compression Point 90 Watts CW

900 MHz

Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 35 Watts Avg.
Frequency Gps
(dB)
PAE
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
920 MHz30.037.0–62–750.8
940 MHz30.037.8–62–751.2
960 MHz29.538.0–62–751.5

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