920-960 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

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The MDE6IC9120NR1 and MDE6IC9120GNR1 wideband integrated circuits are designed with on-chip matching that make them usable from 920 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

Data Sheet

Application Notes

Product Details

RF Performance Table

900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 28 Volts, I_DQ1A = I_DQ1B = 90 mA, I_DQ2A = 550 mA, V_G2B = 1.6 Vdc, Pout = 25 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	PAE (%)	Output PAR (dB)	ACPR (dBc)
920 MHz	32.5	38.4	6.6	–39.0
940 MHz	32.0	38.0	6.7	–40.4
960 MHz	31.3	37.7	7.0	–39.6

Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 146 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 100 mW to 120 Watts CW Pout
Typical Pout @ 1 dB Compression Point ≃ 120 Watts CW

Documentation

Quick reference to our documentation types.

6 documents

Compact List

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

PDFMay 12, 2004Rev 1
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

PDFOct 9, 2003Rev 0

MDE6IC9120NR1, MDE6IC9120GNR1 920-960 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers[MDE6IC9120N]

PDFNov 12, 2009Rev 0

98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins[SOT1725-1]

PDFMar 18, 2016Rev E
98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins[SOT1728-1]

PDFMar 18, 2016Rev E

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

Quick reference to our design files types.

3 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
MDE6IC9120N RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019 00:00:001.5 MBMDE6IC9120N_MDL_ADS

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Models
MDE6IC9120NR1, MDE6IC9120GNR1 S-parameters

S2PRev 0Oct 20, 2009 00:00:0068.5 KBMDE6IC9120N_SP

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Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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920-960 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

Product Details

RF Performance Table

900 MHz

Documentation

Filter by

Application Note (2)

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

Data Sheet (1)

MDE6IC9120NR1, MDE6IC9120GNR1 920-960 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers[MDE6IC9120N]

Package Information (2)

98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins[SOT1725-1]

98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins[SOT1728-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

MDE6IC9120NR1, MDE6IC9120GNR1 920-960 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

Using Data Sheet Impedances for RF LDMOS Devices

98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins

98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins

Design Resources

Design Files

Filter by

MDE6IC9120N RF High-Power Model ADS Product Model Design Kit

MDE6IC9120NR1, MDE6IC9120GNR1 S-parameters

RF High Power Model ADS Model Kit goto: Click the Download button to select.

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