920-960 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs

MRF8S9100H
  • Archived
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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RF Performance Tables

900 MHz

Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW
Frequency Gps
(dB)
ηD
(%)
920 MHz19.351.6
940 MHz19.352.9
960 MHz19.154.1
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 133 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 108 Watts CW

900 MHz

Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 45 Watts Avg.
Frequency Gps
(dB)
ηD
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
920 MHz19.143–64.1–74.51.8
940 MHz19.144–63.6–74.62.0
960 MHz19.045–62.8–75.12.3

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