BF1118: Silicon RF switches ARCHIVED

Overview

Archived content is no longer updated and is made available for historical reference only.

These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges.

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Features

Specially designed for low loss RF switching up to 1 GHz

Target Applications

Various RF switching applications such as:
- Passive loop through for VCR tuner
- Transceiver switching

MoreLess

Features

Specially designed for low loss RF switching up to 1 GHz

Target Applications

Various RF switching applications such as:
- Passive loop through for VCR tuner
- Transceiver switching

Data Sheets

Outline 3d SOT143b

Outline 3d SOT143b

Outline 3d SOT143b

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