The MC33395 combines gate drive, charge pump, current sense, and protection circuitry necessary to drive 3-phase bridge configuration of six N-channel power MOSFETs. Mode logic is incorporated to route a pulse width modulation (PWM )signal to either the low-side FETs or high-side FETS of the bridge, or to provide complementary PWM outputs to both the low and high sides of the bridge. Pulse width modulation frequencies up to 28 kHz are possible. Very few external components are required to implement the 3-phase bridge gate driver: Three tiny capacitors for the charge pump, a current sense resistor, and a few current limit comparator biasing resistors. Built-in protection circuitry prevents damage to the MOS- FET bridge as well as the drive IC, and includes: overvoltage shutdown, over-temperature shutdown, overcurrent shut- down, undervoltage shutdown, reverse battery detect and supply cut-off (via external reverse battery MOSFET).
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