
1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors

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| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 915 (1) | CW | 750 | 19.3 | 67.1 |
| 915 (2) | Pulse (100 µsec, 10% Duty Cycle) | 850 | 20.5 | 69.2 |
| 1300 (3) | CW | 700 | 17.2 | 56.0 |
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 915 (2) | Pulse (100 µsec, 10% Duty Cycle) |
> 10:1 at all Phase Angles | 15.9 Peak (3 dB Overdrive) |
50 | No Device Degradation |

1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors
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