AFT09MS031N|31 W CW, 764-941 MHz, 13.6 V

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AFT09MS031N

The AFT09MS031NR1 and AFT09MS031GNR1 are designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in mobile radio equipment.

See product image

Data Sheet

Application Notes

Product Details

Features

Characterized for Operation from 764 to 941 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band (764 to 870 MHz)
225°C Capable Plastic Package
Exceptional Thermal Performance
High Linearity for: TETRA, SSB, LTE
Cost-effective Over-molded Plastic Packaging
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.

Output Stage 800 MHz Trunking Band Mobile Radio
Output Stage 900 MHz Trunking Band Mobile Radio

RF Performance Tables

764-941 MHz Narrowband

13.6 Vdc, I_DQ = 500 mA, T_A = 25°C, CW

Frequency (MHz)	G_ps (dB)	η_D (%)	P1dB (W)
764	18.0	74.1	32
870	17.2	71.0	31
941	15.7	68.1	31

764-870 MHz Broadband

13.6 Vdc, I_DQ = 100 mA, T_A = 25°C, CW

Frequency (MHz)	G_ps (dB)	η_D (%)	P1dB (W)
760	15.7	62.0	44
820	15.7	63.0	37
870	15.5	61.0	36

Ruggedness, 870 MHz

Frequency (MHz)	Signal Type	VSWR	Pin (W)	Test Voltage	Result
870⁽¹⁾	CW	>65:1 at all Phase Angles	1.2 (3 dB Overdrive)	17	No Device Degradation
870⁽²⁾	CW	>65:1 at all Phase Angles	2.0 (3 dB Overdrive)	17	No Device Degradation

1. Measured in 870 MHz narrowband test circuit.
2. Measured in 760-870 MHz broadband reference circuit.

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

9 documents

Compact List

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

PDFJul 11, 2024Rev 2
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

PDFMar 12, 2009Rev 0

AFT09MS031NR1, AFT09MS031GNR1 764-941 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors - Data Sheet[AFT09MS031N]

PDFAug 31, 2012Rev 1

98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins[SOT1731-1]

PDFMar 30, 2016Rev D
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins[SOT1732-1]

PDFFeb 26, 2016Rev R

New Generation of Land Mobile Radio Products[LANDMOBILE_TRN_SI]

PDFJun 15, 2012Rev 0

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Designing with Plastic RF Power Transistors White Paper[RFPLASTICWP]

PDFSep 24, 2015Rev 2

Design Resources

Design Files

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1-5of 7 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
AFT09MS031N RF High-Power Model AWR Product Model Design Kit.

ZIPRev 1Feb 8, 2013 00:00:00656.9 KBAFT09MS031N_MDL_AWR

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Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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Models
RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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Models
AFT09MS031N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00238.6 KBAFT09MS031N_MDL_ADS

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Models
AFT09MS031NR1, AFT09MS031GNR1 S-Parameters

S2PRev 0May 25, 2012 00:00:005.2 KBAFT09MS031N_SP

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Printed Circuit Boards and Schematics
AFT09MS031N 870 MHz Narrowband PCB DXF file

ZIPRev 2May 25, 2012 00:00:0028.9 KBAFT09MS031N_870NB_PCB

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Calculators
AFT09MS031NR1, AFT09MS031GNR1 RF Power Electromigration MTTF Calculation Program

XLSXRev 0May 25, 2012 00:00:0030.0 KBAFT09MS031N_MTTF_CALC

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Show All

764-941 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors

Product Details

Features

RF Performance Tables

764-941 MHz Narrowband

764-870 MHz Broadband

Ruggedness, 870 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (3)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

Data Sheet (1)

AFT09MS031NR1, AFT09MS031GNR1 764-941 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors - Data Sheet[AFT09MS031N]

Package Information (2)

98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins[SOT1731-1]

98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins[SOT1732-1]

Supporting Information (1)

New Generation of Land Mobile Radio Products[LANDMOBILE_TRN_SI]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

White Paper (1)

Designing with Plastic RF Power Transistors White Paper[RFPLASTICWP]

Design Resources

Design Files

Filter by

AFT09MS031N RF High-Power Model AWR Product Model Design Kit.

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

AFT09MS031N RF High-Power Model ADS Product Model Design Kit

AFT09MS031NR1, AFT09MS031GNR1 S-Parameters

AFT09MS031N 870 MHz Narrowband PCB DXF file

AFT09MS031NR1, AFT09MS031GNR1 RF Power Electromigration MTTF Calculation Program

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