1400-2200 MHz, 2.5 W Avg., 28 V Wideband Integrated RF LDMOS Amplifier

A2I20D020N

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Product Details

Features

  • Extremely Wide RF Bandwidth
  • RF Decoupled Drain Pins Reduce Overall Board Space
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • RoHS Compliant

Key Parametrics

  • Frequency (Min) (MHz)
    1400
  • Frequency (Max) (MHz)
    2200
  • Supply Voltage (Typ) (V)
    28
  • Peak Power (Typ) (dBm)
    43.8
  • Peak Power (Typ) (W)
    24
  • Die Technology
    LDMOS

RF Performance Table

1800-2200 MHz

Typical Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ1(A+B) = 32 mA, IDQ2(A+B) = 110 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
PAE
(%)
ACPR
(dBc)
1800 MHz31.019.7–44.3
1900 MHz31.021.7–45.0
2000 MHz31.122.1–45.2
2100 MHz31.421.1–45.2
2200 MHz32.019.6–44.8

Documentation

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