1400-2200 MHz, 2.5 W Avg., 28 V Wideband Integrated RF LDMOS Amplifier

A2I20D020N

See product image

Product Details

Select a section:

Features

  • Extremely Wide RF Bandwidth
  • RF Decoupled Drain Pins Reduce Overall Board Space
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • RoHS Compliant

RF Performance Table

1800-2200 MHz

Typical Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ1(A+B) = 32 mA, IDQ2(A+B) = 110 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
PAE
(%)
ACPR
(dBc)
1800 MHz31.019.7–44.3
1900 MHz31.021.7–45.0
2000 MHz31.122.1–45.2
2100 MHz31.421.1–45.2
2200 MHz32.019.6–44.8

Documentation

Quick reference to our documentation types.

1-5 of 8 documents

Show All

Design Resources

Select a section:

Design Files

4 design files

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    A2I20D020N RF High-Power Model ADS Product Model Design Kit

  • Models

    A2I20D020N S-Parameters

Support

What do you need help with?