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Product Details

Features

  • Extremely Wide RF Bandwidth
  • RF Decoupled Drain Pins Reduce Overall Board Space
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • RoHS Compliant

Key Parametrics

  • Frequency (Min) (MHz)
    1400
  • Frequency (Max) (MHz)
    2200
  • Supply Voltage (Typ) (V)
    28
  • Peak Power (Typ) (dBm)
    46.5
  • Peak Power (Typ) (W)
    44.6
  • Die Technology
    LDMOS

RF Performance Table

1800-2200 MHz

Typical Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ1(A+B) = 56 mA, IDQ2(A+B) = 220 mA, Pout = 5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
PAE
(%)
ACPR
(dBc)
1800 MHz32.721.8–43.6
1900 MHz32.620.7–44.5
2000 MHz32.820.1–44.8
2100 MHz32.919.9–44.9
2200 MHz33.319.7–44.5

Documentation

Quick reference to our documentation types.

1-5 of 8 documents

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Design Resources

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Design Files

1-5 of 7 design files

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    A2I20D040N RF High-Power Model ADS Product Model Design Kit

  • Models

    A2I20D040N S-Parameters

  • Models

    A2I20D040N RF High-Power Model AWR Product Model Design Kit

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