3200-4000 MHz, 3.4 W Avg., 28 V Airfast® Wideband Integrated RF LDMOS Amplifier

A3I35D025WN
The A3I35D025WN wideband integrated circuit is designed for cellular base station applications requiring very wide instantaneous bandwidth capability. This circuit includes on-chip matching that makes it usable from 3200 to 4000 MHz. Its multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.

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Product Details

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Features

  • Designed for wide instantaneous bandwidth applications
  • On-chip matching (50 ohm input, DC blocked)
  • Integrated quiescent current temperature compensation with enable/disable function
  • Designed for digital predistortion error correction systems
  • Optimized for Doherty applications
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    3200
  • Frequency (Max) (MHz)
    4000
  • Supply Voltage (Typ) (V)
    28
  • Peak Power (Typ) (dBm)
    45.4
  • Peak Power (Typ) (W)
    35
  • Die Technology
    LDMOS

RF Performance Table

3500 MHz

Typical Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ1(A+B) = 72 mA, IDQ2(A+B) = 260 mA, Pout = 3.4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)		 PAE
(%)		 ACPR
(dBc)
3400 MHz28.516.5–46.5
3500 MHz28.817.0–46.3
3600 MHz28.917.3–46.1
3700 MHz28.717.7–46.4
3800 MHz28.517.9–46.2
1. All data measured in fixture with device soldered to heatsink.

Design Resources

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Documentation

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Design Files

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2 design files

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