Design Files
2 design files
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Models
A3I35D025WN S-Parameters
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Printed Circuit Boards and Schematics
A3I35D025WN 3500 MHz PCB DXF file
3200-4000 MHz, 3.4 W Avg., 28 V Airfast® Wideband Integrated RF LDMOS Amplifier
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The A3I35D025WN wideband integrated circuit is designed for cellular base station applications requiring very wide instantaneous bandwidth capability. This circuit includes on-chip matching that makes it usable from 3200 to 4000 MHz. Its multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.
TO-270WB-17, TO-270WBG-17 Package Image
Product Details
Features
- Designed for wide instantaneous bandwidth applications
- On-chip matching (50 ohm input, DC blocked)
- Integrated quiescent current temperature compensation with enable/disable function
- Designed for digital predistortion error correction systems
- Optimized for Doherty applications
- RoHS compliant
Key Parametrics
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- Frequency (Min) (MHz)
- 3200
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- Frequency (Max) (MHz)
- 4000
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- Supply Voltage (Typ) (V)
- 28
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- Peak Power (Typ) (dBm)
- 45.4
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- Peak Power (Typ) (W)
- 35
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- Die Technology
- LDMOS
RF Performance Table
3500 MHz
Typical Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ1(A+B) = 72 mA, IDQ2(A+B) = 260 mA, Pout = 3.4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)| Frequency | Gps (dB) |
PAE (%) |
ACPR (dBc) |
| 3400 MHz | 28.5 | 16.5 | –46.5 |
| 3500 MHz | 28.8 | 17.0 | –46.3 |
| 3600 MHz | 28.9 | 17.3 | –46.1 |
| 3700 MHz | 28.7 | 17.7 | –46.4 |
| 3800 MHz | 28.5 | 17.9 | –46.2 |
Documentation
Quick reference to our documentation types.
4 documents
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Engineering Bulletin
Using Data Sheet Impedances for RF LDMOS Devices
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Package Information
98ASA00583D, TO-270WB-17, 17.53x9.02x2.59, Pitch 9.02, 18 Pins
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Package Information
98ASA00729D, TO-270WBG-17, 17.53x9.02x2.59, Pitch 1.02, 18 Pins