1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors

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  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 V to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13-inch Reel.

Part numbers include: MRFE6VP61K25GS, MRFE6VP61K25H, MRFE6VP61K25HS, MRFE6VP61K25-VHF.

RF Performance Tables

Typical Narrowband Performance

VDD = 50 Volts, IDQ = 100 mA

Application Circuits — Typical Performance

Load Mismatch/Ruggedness


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Design Files

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