
1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors
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Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
87.5-108(1,2) | CW | 1309 CW | 24.1 | 77.6 |
230(3) | Pulse (100 µsec, 20% Duty Cycle) | 1250 Peak | 23.0 | 72.3 |
Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
230(3) | Pulse (100 µsec, 20% Duty Cycle) |
> 65:1 at all Phase Angles |
11.5 Peak (3 dB Overdrive) |
50 | No Device Degradation |
1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors
136-941 MHz, 4 W, 7.5 V Wideband RF Power LDMOS Transistor
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