1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors

MRFE6VP61K25N

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Product Details

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Features

  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • Recommended drivers: AFT05MS004N (4 W) or MRFE6VS25N (25 W)
  • Broadcast
    • FM broadcast
    • HF and VHF broadcast
  • Industrial, Scientific, Medical (ISM)
    • CO2 laser generation
    • Plasma etching
    • Particle accelerators (synchrotrons)
    • MRI
    • Industrial heating/welding
  • Aerospace
    • VHF omnidirectional range (VOR)
    • Weather radar
  • Mobile Radio
    • HF and VHF communications
    • PMR base stations

RF Performance Tables

Typical Performance

VDD = 50 Vdc

Load Mismatch/Ruggedness

1. Measured in 87.5-108 MHz broadband reference circuit.
2. The values shown are the center band performance numbers across the indicated frequency range.
3. Measured in 230 MHz narrowband test circuit.

Documentation

Quick reference to our documentation types.

5 documents

Design Resources

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Design Files

1-5 of 10 design files

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    MRFE6VP61K25N RF High-Power Model AWR Product Model Design Kit

  • Models

    MRFE6VP61K25N S-Parameters

  • Models

    MRFE6VP61K25N RF High-Power Model ADS Product Model Design Kit

  • Printed Circuit Boards and Schematics

    MRFE6VP61K25N 87.5-108 MHz PCB DXF file

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