1200-1400 MHz, 1000 W Peak, 52 V Airfast® RF Power LDMOS Transistors

MMRF1314H Active
  • This page contains information on a product that is not recommended for new designs.
These RF power devices, MMRF1314H, MMRF1314HS and MMRF1314GS, are designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The devices are suitable for use in pulse applications and are ideal for use in high power military and commercial L-Band radar applications.

See product image

Features

  • Internally input and output matched for broadband operation and ease of use
  • Device can be used in a single-ended, push-pull or quadrature configuration
  • Qualified up to a maximum of 52 VDD operation
  • High ruggedness, handles > 20:1 VSWR
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation and gate voltage pulsing
  • Characterized with series equivalent large-signal impedance parameters
  • RoHS Compliant
  • These products are included in our product longevity program with assured supply for a minimum of 15 years after launch.
  • Military and commercial L-Band radar systems

RF Performance Tables

Typical Performance

In 1200-1400 MHz reference circuit, VDD = 52 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
1200Pulse
(128 µsec, 10% Duty Cycle)		1130 Peak15.547.5
13001170 Peak17.247.0
14001000 Peak17.046.5

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
1400Pulse
(128 µsec, 10% Duty Cycle)		> 20:1 at all Phase Angles31.6 Peak
(3 dB Overdrive)		52No Device Degradation

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N true 0 PSPMMRF1314Hen 7 Application Note Application Note t789 2 Data Sheet Data Sheet t520 1 Package Information Package Information t790 2 Supporting Information Supporting Information t531 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 1 English MMRF1314H 1200-1400 MHz, 1000 W Peak, 52 V RF LDMOS power transistor for high power military and commercial L-Band radar applications 1458968561635720106807 PSP 478.8 KB None None documents None 1458968561635720106807 /docs/en/data-sheet/MMRF1314H.pdf 478778 /docs/en/data-sheet/MMRF1314H.pdf MMRF1314H documents N N 2017-01-10 MMRF1314H 1200-1400 MHz, 1000 W Peak, 52 V Data Sheet /docs/en/data-sheet/MMRF1314H.pdf /docs/en/data-sheet/MMRF1314H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jan 6, 2017 980000996212993340 Data Sheet Y N MMRF1314H 1200-1400 MHz, 1000 W Peak, 52 V Data Sheet Application Note Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages Technical Notes Technical Notes 1 4 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 2 5 H English 98ASB16977C, NI-1230H-4S A1003176946486 PSP 159.0 KB None None documents None A1003176946486 /docs/en/package-information/98ASB16977C.pdf 159037 /docs/en/package-information/98ASB16977C.pdf SOT1787-1 documents N N 2016-10-31 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf /docs/en/package-information/98ASB16977C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Oct 25, 2019 302435339416912908 Package Information D N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 6 H English 98ARB18247C, 375E-04, NI-1230S-4S B1003167510411 PSP 44.6 KB None None documents None B1003167510411 /docs/en/package-information/98ARB18247C.pdf 44578 /docs/en/package-information/98ARB18247C.pdf SOT1829-1 documents N N 2016-10-31 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf /docs/en/package-information/98ARB18247C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 23, 2016 302435339416912908 Package Information D N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins Supporting Information Supporting Information 1 7 0 English MMRF1312H, MMRF1314H, MMRF1317H, MMRF2010N RF high power LDMOS avionics devices 1458978153090712917208 PSP 726.5 KB None None documents None 1458978153090712917208 /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf 726548 /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf MILITARY_HIGH_POWER_RADAR_TRN_SI documents N N 2016-10-31 RF Military High Power Avionics Devices /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf Supporting Information N 371282830530968666 2024-03-13 pdf N en Mar 25, 2016 371282830530968666 Supporting Information Y N RF Military High Power Avionics Devices false 0 MMRF1314H downloads en true 1 Y PSP Application Note 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 3 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 Data Sheet 1 /docs/en/data-sheet/MMRF1314H.pdf 2017-01-10 1458968561635720106807 PSP 1 Jan 6, 2017 Data Sheet MMRF1314H 1200-1400 MHz, 1000 W Peak, 52 V RF LDMOS power transistor for high power military and commercial L-Band radar applications None /docs/en/data-sheet/MMRF1314H.pdf English documents 478778 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MMRF1314H.pdf MMRF1314H 1200-1400 MHz, 1000 W Peak, 52 V Data Sheet /docs/en/data-sheet/MMRF1314H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N MMRF1314H 1200-1400 MHz, 1000 W Peak, 52 V Data Sheet 478.8 KB MMRF1314H N 1458968561635720106807 Package Information 2 /docs/en/package-information/98ASB16977C.pdf 2016-10-31 A1003176946486 PSP 5 Oct 25, 2019 Package Information 98ASB16977C, NI-1230H-4S None /docs/en/package-information/98ASB16977C.pdf English documents 159037 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16977C.pdf 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 159.0 KB SOT1787-1 N A1003176946486 /docs/en/package-information/98ARB18247C.pdf 2016-10-31 B1003167510411 PSP 6 Feb 23, 2016 Package Information 98ARB18247C, 375E-04, NI-1230S-4S None /docs/en/package-information/98ARB18247C.pdf English documents 44578 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ARB18247C.pdf 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins 44.6 KB SOT1829-1 N B1003167510411 Supporting Information 1 /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf 2016-10-31 1458978153090712917208 PSP 7 Mar 25, 2016 Supporting Information MMRF1312H, MMRF1314H, MMRF1317H, MMRF2010N RF high power LDMOS avionics devices None /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf English documents 726548 None 371282830530968666 2024-03-13 N /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf RF Military High Power Avionics Devices /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf documents 371282830530968666 Supporting Information N en None Y pdf 0 N N RF Military High Power Avionics Devices 726.5 KB MILITARY_HIGH_POWER_RADAR_TRN_SI N 1458978153090712917208 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 4 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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