AFT05MS031N|31 W CW, 136-520 MHz, 13.6 V

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AFT05MS031N

The AFT05MS031NR1 and AFT05MS031GNR1 are designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in mobile radio equipment.

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Data Sheet

Application Notes

Product Details

Features

Characterized for Operation from 136 to 520 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band
- 136-174 MHz
- 380-450 MHz
- 450-520 MHz
225°C Capable Plastic Package
Exceptional Thermal Performance
High Linearity for: TETRA, SSB, LTE
Cost-effective Over-molded Plastic Packaging
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.

Output Stage VHF Band Mobile Radio
Output Stage UHF Band Mobile Radio

RF Performance Tables

VHF, 136-174 MHz

13.6 Vdc, T_A = 25°C, CW

Frequency (MHz)	G_ps (dB)	η_D (%)	P1dB (W)
136-174	23.2	62.0	31

UHF, 380-520 MHz

13.6 Vdc, T_A = 25°C, CW

Frequency (MHz)	G_ps (dB)	η_D (%)	P1dB (W)
380-450	18.3	64.1	31

520 MHz Narrowband

13.6 Vdc, T_A = 25°C, CW

Frequency (MHz)	G_ps (dB)	η_D (%)	P1dB (W)
450-520	17.7	62.0	31
520	17.7	71.4	33

Ruggedness, 520 MHz

Frequency (MHz)	Signal Type	VSWR	Pin (W)	Test Voltage	Result
520	CW	>65:1 at all Phase Angles	1.1 (3 dB Overdrive)	17	No Device Degradation

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

1-5 of 9 documents

Data Sheet
AFT05MS031NR1, AFT05MS031GNR1 136-520 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors - Data Sheet

PDFRev 1Apr 26, 20131.1 MBAFT05MS031NEnglish
Application Note
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
Application Note
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
Application Note
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Mar 12, 2009449.7 KBAN3789English
Technical Notes
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
Package Information
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins

PDFRev DMar 30, 201686.0 KBSOT1731-1English
Package Information
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

PDFRev RFeb 26, 201691.2 KBSOT1732-1English
Supporting Information
New Generation of Land Mobile Radio Products

PDFRev 0Jun 15, 2012877.8 KBLANDMOBILE_TRN_SIEnglish
White Paper
Designing with Plastic RF Power Transistors White Paper

PDFRev 2Sep 24, 2015911.8 KBRFPLASTICWPEnglish

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Design Resources

Design Files

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1-5of 7 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
AFT05MS031N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00226.4 KBAFT05MS031N_MDL_ADS

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Models
AFT05MS031NR1, AFT05MS031GNR1 S-Parameters

S2PRev 0Jun 13, 2012 00:00:0010.6 KBAFT05MS031N_SP

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Models
AFT05MS031N RF High-Power Model AWR Product Model Design Kit.

ZIPRev 1Feb 8, 2013 00:00:00303.8 KBAFT05MS031N_MDL_AWR

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Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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Models
RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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Printed Circuit Boards and Schematics
AFT05MS031N 520 MHz Narrowband PCB DXF file

ZIPRev 1Jun 13, 2012 00:00:00221.2 KBAFT05MS031N_520NB_PCB

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Calculators
AFT05MS031NR1, AFT05MS031GNR1 RF Power Electromigration MTTF Calculation Program

XLSXRev 0Jun 13, 2012 00:00:0030.6 KBAFT05MS031N_MTTF_CALC

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136-520 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors

Product Details

Features

RF Performance Tables

VHF, 136-174 MHz

UHF, 380-520 MHz

520 MHz Narrowband

Ruggedness, 520 MHz

Buy/Parametrics

Documentation

Filter by

AFT05MS031NR1, AFT05MS031GNR1 136-520 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors - Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins

98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

New Generation of Land Mobile Radio Products

Designing with Plastic RF Power Transistors White Paper

Design Resources

Design Files

Filter by

AFT05MS031N RF High-Power Model ADS Product Model Design Kit

AFT05MS031NR1, AFT05MS031GNR1 S-Parameters

AFT05MS031N RF High-Power Model AWR Product Model Design Kit.

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

AFT05MS031N 520 MHz Narrowband PCB DXF file

AFT05MS031NR1, AFT05MS031GNR1 RF Power Electromigration MTTF Calculation Program

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