136-520 MHz, 70 W, 12.5 V Broadband RF Power LDMOS Transistors

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Features

  • Characterized for Operation from 136 to 520 MHz
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Integrated ESD Protection
  • Integrated Stability Enhancements
  • Wideband — Full Power Across the Band
  • Exceptional Thermal Performance
  • Extreme Ruggedness
  • High Linearity for: TETRA, SSB, LTE
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.
  • Output Stage VHF Band Mobile Radio
  • Output Stage UHF Band Mobile Radio

RF Performance Tables

Typical Performance

12.5 V, TA = 25°C, CW

Ruggedness

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Documentation

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Design Files

Quick reference to our design files types.

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