MRFE8VP8600H|140 W Avg., 470-860 MHz, 50 V

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MRFE8VP8600H

The MRFE8VP8600H and MRFE8VP8600HS high power transistors are designed for use in UHF TV broadcast applications. The devices have an integrated input matching network for better power distribution and are ideal for use in both analog and digital TV transmitters.

See product image

Data Sheet

Application Notes

Product Details

Features

Excellent thermal characteristics
High gain for reduced PA size
High efficiency for Class AB and Doherty operations
Integrated input matching and unmatched output
Extended negative gate-gource voltage range of -6 Vdc to +10 Vdc
RoHS compliant

RF Performance Tables

DBV-T Broadband Class AB Performance

V_DD = 50 Vdc, I_DQ = 1400 mA, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.

Signal Type	P_out (W)	f (MHz)	G_ps (dB)	η_D (%)	Output PAR (dB)
DVB-T (8k OFDM)	140 Avg.	474	20.2	29.7	8.9
		610	20.7	34.5	8.2
		810	20.0	34.0	8.4

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	P_out (W)	Test Voltage	Result
860	DVB-T (8k OFDM)	20:1 at all Phase Angles	125 (3 dB Overdrive)	50	No Device Degradation

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

4 documents

Data Sheet
MRFE8VP8600H 140 W Avg, 470-870 MHz, 50 V Data Sheet

PDFRev 1Aug 11, 2017338.0 KBMRFE8VP8600HEnglish
Application Note
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

PDFRev 1Feb 24, 2011664.6 KBAN1908English
Package Information
98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins

PDFRev HOct 25, 2019159.0 KBSOT1787-1English
Package Information
98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins

PDFRev HFeb 23, 201644.6 KBSOT1829-1English

Design Resources

Design Files

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1-5of 6 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
MRFE8VP8600H RF High-Power Model AWR Product Model Design Kit

ZIPRev 1Jul 21, 2015 00:00:003.2 MBMRFE8VP8600H_MDL_AWR

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Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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Models
RF High Power Model AWR Model Kit goto: Click the Download button to select.

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Models
MRFE8VP8600H RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:001.3 MBMRFE8VP8600H_MDL_ADS

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Printed Circuit Boards and Schematics
MRFE8VP8600H PCB DXF file

ZIPRev 0Aug 3, 2015 00:00:00361.2 KBMRFE8VP8600H_PCB

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Calculators
MRFE8VP8600H RF Power Electromigration MTTF Calculation Program

XLSXRev 0Jul 30, 2015 00:00:0032.0 KBMRFE8VP8600H_MTTF_CALC

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Show All

140 W Avg. over 470-860 MHz, 50 V RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

DBV-T Broadband Class AB Performance

Load Mismatch/Ruggedness

Buy/Parametrics

Documentation

Filter by

MRFE8VP8600H 140 W Avg, 470-870 MHz, 50 V Data Sheet

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins

98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins

Design Resources

Design Files

Filter by

MRFE8VP8600H RF High-Power Model AWR Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRFE8VP8600H RF High-Power Model ADS Product Model Design Kit

MRFE8VP8600H PCB DXF file

MRFE8VP8600H RF Power Electromigration MTTF Calculation Program

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