1400-2200 MHz, 2.5 W Avg., 28 V Wideband Integrated RF LDMOS Amplifier

A2I20D020N
  • Not Recommended for New Designs
  • This page contains information on a product that is not recommended for new designs.
The A2I20D020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1400 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.

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Product Details

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Features

  • Extremely Wide RF Bandwidth
  • RF Decoupled Drain Pins Reduce Overall Board Space
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • RoHS Compliant

RF Performance Table

1800-2200 MHz

Typical Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ1(A+B) = 32 mA, IDQ2(A+B) = 110 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 PAE
(%)		 ACPR
(dBc)
1800 MHz31.019.7–44.3
1900 MHz31.021.7–45.0
2000 MHz31.122.1–45.2
2100 MHz31.421.1–45.2
2200 MHz32.019.6–44.8

Documentation

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Design Resources

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Design Files

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4 design files

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

    HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

    HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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  • Models

    A2I20D020N RF High-Power Model ADS Product Model Design Kit

    ZIPRev 1Jun 17, 2019 00:00:00830.3 KBA2I20D020N_MDL_ADS
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  • Models

    A2I20D020N S-Parameters

    S2PRev 0May 16, 2016 00:00:0022.6 KBA2I20D020N_SP
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