A2I20D020N|1400-2200 MHz, 2.5 W Avg, 28 V

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A2I20D020N

The A2I20D020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1400 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.

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Data Sheet

Application Notes

Product Details

Features

Extremely Wide RF Bandwidth
RF Decoupled Drain Pins Reduce Overall Board Space
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
RoHS Compliant

RF Performance Table

1800-2200 MHz

Typical Single-Carrier W-CDMA Characterization Performance: V_DD = 28 Vdc, I_DQ1(A+B) = 32 mA, I_DQ2(A+B) = 110 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	PAE (%)	ACPR (dBc)
1800 MHz	31.0	19.7	–44.3
1900 MHz	31.0	21.7	–45.0
2000 MHz	31.1	22.1	–45.2
2100 MHz	31.4	21.1	–45.2
2200 MHz	32.0	19.6	–44.8

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

1-5 of 7 documents

Data Sheet
A2I20D020N 1400-2200 MHz, 2.5 W Avg, 28 V Data Sheet

PDFRev 1May 31, 2017651.6 KBA2I20D020NEnglish
Application Note
Effective Small Cell Solutions for MIMO Radios

PDFRev 0Jan 15, 2017273.2 KBAN5296English
Application Note
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
Application Note
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

PDFRev 1May 12, 2004140.7 KBAN1987English
Application Note
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

PDFRev 0Oct 9, 2003134.6 KBAN1977English
Package Information
98ASA00583D, TO-270WB-17, 17.53x9.02x2.59, Pitch 9.02, 18 Pins

PDFRev BJan 22, 201686.9 KBSOT1730-1English
Package Information
98ASA00729D, TO-270WBG-17, 17.53x9.02x2.59, Pitch 1.02, 18 Pins

PDFRev BJan 18, 201688.0 KBSOT1730-2English

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Design Resources

Design Files

Quick reference to our design files types.

4 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

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RF High Power Model AWR Model Kit goto: Click the Download button to select.

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Models
A2I20D020N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00830.3 KBA2I20D020N_MDL_ADS

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Models
A2I20D020N S-Parameters

S2PRev 0May 16, 2016 00:00:0022.6 KBA2I20D020N_SP

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1400-2200 MHz, 2.5 W Avg., 28 V Wideband Integrated RF LDMOS Amplifier

Product Details

Features

RF Performance Table

1800-2200 MHz

Buy/Parametrics

Documentation

Filter by

A2I20D020N 1400-2200 MHz, 2.5 W Avg, 28 V Data Sheet

Effective Small Cell Solutions for MIMO Radios

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

98ASA00583D, TO-270WB-17, 17.53x9.02x2.59, Pitch 9.02, 18 Pins

98ASA00729D, TO-270WBG-17, 17.53x9.02x2.59, Pitch 1.02, 18 Pins

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2I20D020N RF High-Power Model ADS Product Model Design Kit

A2I20D020N S-Parameters

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