1400-2200 MHz, 2.5 W Avg., 28 V Wideband Integrated RF LDMOS Amplifier

A2I20D020N
  • Not Recommended for New Designs
  • This page contains information on a product that is not recommended for new designs.

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Product Details

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Features

  • Extremely Wide RF Bandwidth
  • RF Decoupled Drain Pins Reduce Overall Board Space
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • RoHS Compliant

Part numbers include: A2I20D020GN, A2I20D020N.

RF Performance Table

1800-2200 MHz

Typical Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ1(A+B) = 32 mA, IDQ2(A+B) = 110 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
PAE
(%)
ACPR
(dBc)
1800 MHz31.019.7–44.3
1900 MHz31.021.7–45.0
2000 MHz31.122.1–45.2
2100 MHz31.421.1–45.2
2200 MHz32.019.6–44.8

Documentation

Quick reference to our documentation types.

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Design Resources

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Design Files

4 design files

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