1400 MHz, 330 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs

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Product Details

Features

  • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 µsec, Duty Cycle = 12%
    Power Gain: 18 dB
    Drain Efficiency: 60.5%
  • Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 300 Watts Peak Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Part numbers include: MRF6V14300H, MRF6V14300HS.

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