1500 W CW over 1.8-500 MHz, 50 V Wideband RF Power LDMOS Transistor

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Product Details


  • High Drain-source Avalanche Energy Absorption Capability
  • Unmatched Input and Output
  • Device Can Be Used Single-Ended or in a Push-Pull Configuration
  • Characterized from 30 to 50 V
  • High Rugggedness. Handles 65:1 VSWR.
  • RoHS Compliant
  • Recommended Driver: MRFE6VS25N (25 W)
  • Lower Thermal Resistance Part Available: MRF1K50N
  • Industrial, Scientific, Medical (ISM)
    • Laser generation
    • Plasma etching
    • Particle accelerators
    • MRI, diathermy, skin laser and ablation
    • Industrial heating, welding and drying systems
  • Broadcast
    • Radio broadcast
    • VHF TV broadcast
  • Aerospace
    • VHF omnidirectional range (VOR)
    • HF and VHF communications
    • Weather radar
  • Mobile Radio
    • VHF and UHF base stations

Part numbers include: MRF1K50H.

RF Performance Table

Typical Performance

VDD = 50 Vdc
Signal Type Pout
27CW1550 CW25.978.3
81.36(1)CW1400 CW23.075.0
87.5-108(2,3)CW1475 CW23.383.4
(100 µsec, 20% Duty Cycle)
1500 Peak23.774.0
1. Data from 81.36 MHz narrowband reference circuit.
2. Data from 87.5-108 MHz broadband reference circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.
4. Data from 230 MHz narrowband production test fixture.


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Design Files

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