1500 W CW over 1.8-500 MHz, 50 V Wideband RF Power LDMOS Transistor


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  • High drain-source avalanche energy absorption capability
  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single-ended or in a push-pull configuration
  • Characterized from 30 to 50 V for ease of use
  • Suitable for linear application
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • RoHS compliant
  • Recommended driver: MRFE6VS25N (25 W)
  • Industrial, Scientific, Medical (ISM)
    • Laser generation
    • Plasma etching
    • Particle accelerators
    • MRI, diathermy, skin laser and ablation
    • Industrial heating, welding and drying systems
  • Broadcast
    • Radio broadcast
    • VHF TV broadcast
  • Aerospace
    • VHF omnidirectional range (VOR)
    • HF and VHF communications
    • Weather radar
  • Mobile Radio
    • VHF and UHF base stations

Part numbers include: MRF1K50GN, MRF1K50N.

RF Performance Tables

Typical Performance

VDD = 50 Vdc
Signal Type Pout
87.5-108(1,2)CW1421 CW23.183.2
(100 µsec, 20% Duty Cycle)
1500 Peak23.475.1

Load Mismatch/Ruggedness

Signal Type VSWR Pin
230(3) Pulse
(100 µsec, 20% Duty Cycle)
> 65:1 at all Phase Angles 15 Peak
(3 dB Overdrive)
50 No Device Degradation
1. Data from 87.5-108 MHz wideband reference circuit.
2. The values shown are the center band performance numbers across the indicated frequency range.
3. Data from 230 MHz narrowband production test fixture.
4. All data measured in fixture with device soldered to heatsink.


Quick reference to our documentation types.

4 documents

Design Resources

Design Files

1-5 of 11 design files

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