A2T21H100-25S|2110-2170 MHz, 18 W, 28 V

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A2T21H100-25S

The A2T21H100-25SR3 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

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Data Sheet

Product Details

Features

Advanced High Performance In-Package Doherty
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant

RF Performance Table

2100 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQA = 250 mA, V_GSB = 0.2 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2110 MHz	17.3	52.1	8.2	–32.4
2140 MHz	17.4	51.0	8.0	–33.1
2170 MHz	17.4	50.5	8.0	–35.0

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

3 documents

Data Sheet
A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor Data Sheet

PDFRev 1Jan 26, 2022443.3 KBA2T21H100-25SEnglish
Technical Notes
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
Package Information
98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins

PDFRev AFeb 15, 201656.1 KBSOT1797-1English

Design Resources

Design Files

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1-5of 7 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

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RF High Power Model AWR Model Kit goto: Click the Download button to select.

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A2T21H100-25S RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00547.9 KBA2T21H100_25S_MDL_ADS

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Models
A2T21H100-25SR3 S-Parameters

S2PRev 0Jun 1, 2015 00:00:0048.1 KBA2T21H100_25S_PEAKING_CLASS_C_SP

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A2T21H100-25SR3 S-Parameters

S2PRev 0Jun 1, 2015 00:00:0048.1 KBA2T21H100_25S_CARRIER_250MA_SP

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A2T21H100-25S RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Jul 21, 2015 00:00:001.4 MBA2T21H100_25S_MDL_AWR

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A2T21H100-25SR3 S-Parameters

S2PRev 0Jun 1, 2015 00:00:0048.1 KBA2T21H100_25S_PEAKING_300MA_SP

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Show All

2110-2170 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

2100 MHz

Buy/Parametrics

Documentation

Filter by

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor Data Sheet

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2T21H100-25S RF High-Power Model ADS Product Model Design Kit

A2T21H100-25SR3 S-Parameters

A2T21H100-25SR3 S-Parameters

A2T21H100-25S RF High-Power Model AWR Product Model Design Kit

A2T21H100-25SR3 S-Parameters

Filter By

Support

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Suggested Links

2110-2170 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

2100 MHz

Buy/Parametrics

Documentation

Filter by

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2T21H100-25S RF High-Power Model ADS Product Model Design Kit

A2T21H100-25SR3 S-Parameters

A2T21H100-25SR3 S-Parameters

A2T21H100-25S RF High-Power Model AWR Product Model Design Kit

A2T21H100-25SR3 S-Parameters

Filter By

Support

What do you need help with?

Suggested Links

2110-2170 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor Data Sheet