450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

MW6S010N
  • Not Recommended for New Designs
  • This page contains information on a product that is not recommended for new designs.
The MW6S010NR1 and MW6S010GNR1 are designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

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Product Details

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Features

  • Typical Two-Tone Performance @ 960 MHz, VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP
    Power Gain: 18 dB
    Drain Efficiency: 32%
    IMD: –37 dBc
  • Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • On-Chip RF Feedback for Broadband Stability
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

Documentation

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Design Resources

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Design Files

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4 design files

  • Models

    MW6S010N RF High-Power Model AWR Product Model Design Kit

    ZIPRev 0Jul 21, 2015 00:00:00454.8 KBMW6S010N_MDL_AWR
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  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

    HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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  • Models

    MW6S010N RF High-Power Model ADS Product Model Design Kit

    ZIPRev 2Jun 17, 2019 00:00:00231.5 KBMW6S010N_MDL_ADS
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  • Calculators

    MW6S010N RF Power Electromigration MTTF Calculation Program

    XLSRev 2Aug 1, 2007 00:00:0033.8 KBMW6S010N_MTTF_CALC
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