450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

  • Not Recommended for New Designs
  • This page contains information on a product that is not recommended for new designs.

See product image

Product Details

Select a section:


  • Typical Two-Tone Performance @ 960 MHz, VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP
    Power Gain: 18 dB
    Drain Efficiency: 32%
    IMD: –37 dBc
  • Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • On-Chip RF Feedback for Broadband Stability
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.


Quick reference to our documentation types.

1-5 of 6 documents

Show All

Design Resources

Select a section:

Design Files

4 design files

  • Models

    MW6S010N RF High-Power Model AWR Product Model Design Kit

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    MW6S010N RF High-Power Model ADS Product Model Design Kit

  • Calculators

    MW6S010N RF Power Electromigration MTTF Calculation Program


What do you need help with?