MW6S010N|450-1500 MHz, 10 W, 28 V

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MW6S010N

The MW6S010NR1 and MW6S010GNR1 are designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

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Data Sheet

Application Notes

Product Details

Features

Typical Two-Tone Performance @ 960 MHz, V_DD = 28 Volts, I_DQ = 125 mA, Pout = 10 Watts PEP

Power Gain: 18 dB

Drain Efficiency: 32%

IMD: –37 dBc
Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
On-Chip RF Feedback for Broadband Stability
Qualified Up to a Maximum of 32 V_DD Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

Buy/Parametrics

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Documentation

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1-5 of 6 documents

Data Sheet
MW6S010NR1, MW6S010GNR1 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

PDFRev 5Jun 19, 2009742.7 KBMW6S010NEnglish
Application Note
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
Application Note
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
Application Note
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Mar 12, 2009449.7 KBAN3789English
Package Information
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins

PDFRev DMar 30, 201686.0 KBSOT1731-1English
Package Information
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

PDFRev RFeb 26, 201691.2 KBSOT1732-1English

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Design Resources

Design Files

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4 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
MW6S010N RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Jul 21, 2015 00:00:00454.8 KBMW6S010N_MDL_AWR

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Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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Models
MW6S010N RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019 00:00:00231.5 KBMW6S010N_MDL_ADS

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Calculators
MW6S010N RF Power Electromigration MTTF Calculation Program

XLSRev 2Aug 1, 2007 00:00:0033.8 KBMW6S010N_MTTF_CALC

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450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

Product Details

Features

Buy/Parametrics

Documentation

Filter by

MW6S010NR1, MW6S010GNR1 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins

98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

Design Resources

Design Files

Filter by

MW6S010N RF High-Power Model AWR Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

MW6S010N RF High-Power Model ADS Product Model Design Kit

MW6S010N RF Power Electromigration MTTF Calculation Program

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