600 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor

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  • Unmatched input and output allowing wide frequency range utilization
  • Output impedance fits a 4:1 transformer
  • Device can be used single-ended or in a push-pull configuration
  • Qualified up to a maximum of 65 VDD operation
  • Characterized from 30 to 65 V for extended power range
  • High breakdown voltage for enhanced reliability
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • RoHS compliant
  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma generation
    • Particle accelerators
    • MRI, RF ablation and skin treatment
    • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • Aerospace
    • HF communications
    • Radar
  • Mobile Radio
    • HF and VHF communications
    • PMR base stations

Part numbers include: MRFX600GS, MRFX600H, MRFX600H-230MHZ, MRFX600H-88MHZ, MRFX600HS.

RF Performance Tables

Typical Performance

Signal Type VDD
87.5-108 (1,2)CW62680 CW21.383.0
230 (3)Pulse
(100 µsec, 20% Duty Cycle)
65600 Peak26.474.4

Load Mismatch/Ruggedness

Signal Type VSWR Pin
230 (3)Pulse
(100 µsec, 20% Duty Cycle)
> 65:1
at all Phase Angles
2.5 Peak
(3 dB Overdrive)
65No Device Degradation
1. Measured in 87.5-108 MHz broadband reference circuit.
2. The values shown are the center band performance numbers across the indicated frequency range.
3. Measured in 230 MHz production test fixture.


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Design Files

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5 design files


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