728-2700 MHz, 1.26 W Avg., 28 V Airfast® RF Power LDMOS Transistor
AFT27S012N Receive alerts
- Not Recommended for New Designs
- This page contains information on a product that is not recommended for new designs.
The AFT27S012NT1 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
RF ISO PLD-1.5W Package Image
Product Details
Features
- Greater negative gate-source voltage range for improved Class C operation
- Designed for digital predistortion error correction systems
- Universal broadband driven device with internal RF feedback
- RoHS compliant
RF Performance Table
2100 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 2110 MHz | 20.8 | 22.0 | 9.8 | –41.1 | –9 |
| 2140 MHz | 20.9 | 22.6 | 9.6 | –40.7 | –10 |
| 2170 MHz | 20.9 | 22.8 | 9.4 | –40.8 | –10 |
| 2200 MHz | 20.8 | 22.9 | 9.3 | –40.4 | –9 |
Documentation
Quick reference to our documentation types.
5 documents
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Engineering Bulletin
Using Data Sheet Impedances for RF LDMOS Devices
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Package Information
98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins