AFM907N|8 W CW, 136-941 MHz, 7.5 V

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AFM907N

The AFM907N is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment.

See product image

Data Sheet

Application Notes

Product Details

Features

Characterized for operation from 136 to 941 MHz
Unmatched input and output allowing wide frequency range utilization
Integrated ESD protection
Integrated stability enhancements
Wideband — full power across the band
Exceptional thermal performance
Extreme ruggedness
High linearity for: TETRA, SSB
RoHS compliant

Output stage VHF band handheld radio
Output stage UHF band handheld radio
Output stage for 700-800 MHz handheld radio

RF Performance Tables

Wideband Performance

(In 350-520 MHz reference circuit, 7.5 Vdc, T_A = 25°C, CW)

Frequency (MHz)⁽¹⁾	P_in (W)	G_ps (dB)	η_D (%)	P_out (W)
350	0.25	15.2	56.6	8.4
435	0.25	15.5	61.5	8.9
520	0.25	15.0	64.2	7.9

Narrowband Performance

(7.5 Vdc, T_A = 25°C, CW)

Frequency (MHz)	G_ps (dB)	η_D (%)	P_out (W)
520⁽²⁾	20.7	73.9	8.4

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	Pin (dBm)	Test Voltage	Result
520⁽²⁾	CW	> 65:1 at all Phase Angles	21 (3 dB Overdrive)	10.8	No Device Degradation

1. Measured in 350-520 MHz UHF broadband reference circuit.
2. Measured in 520 MHz narrowband RF test fixture.

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

5 documents

Data Sheet
AFM907N 8 W over 136-941 MHz, 7.5 V Data Sheet

PDFRev 1May 28, 20191.6 MBAFM907NEnglish
Application Note
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
Application Note
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
Technical Notes
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
Package Information
98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins

PDFRev BJul 27, 201651.9 KBSOT1862-1English

Design Resources

Design Files

Quick reference to our design files types.

1-5of 8 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

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Models
AFM907N RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Sep 20, 2016 00:00:00384.3 KBAFM907N_MDL_AWR

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Models
AFM907N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00119.5 KBAFM907N_MDL_ADS

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Printed Circuit Boards and Schematics
AFM907N 350-520 MHz PCB DXF file

ZIPRev 0Apr 19, 2017 00:00:0018.2 KBAFM907N-350-520-PCB

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Printed Circuit Boards and Schematics
AFM907N 760-870 MHz Reference Circuit Design Files

ZIPRev 0Sep 28, 2019 00:00:002.0 MBAFM907N-760-870-MHz-Reference-Circuit

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Printed Circuit Boards and Schematics
AFM907N 520 MHz Narrowband PCB DXF file

ZIPRev 0Apr 19, 2017 00:00:00399.2 KBAFM907N-520NB-PCB

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Calculators
AFM907N RF Power Electromigration MTTF Calculation Program

XLSXRev 0Apr 19, 2017 00:00:0076.2 KBAFM907N_MTTF_CALC

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Show All

8 W CW over 136-941 MHz, 7.5 V Wideband Airfast^® RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

Wideband Performance

Narrowband Performance

Load Mismatch/Ruggedness

Buy/Parametrics

Documentation

Filter by

AFM907N 8 W over 136-941 MHz, 7.5 V Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

AFM907N RF High-Power Model AWR Product Model Design Kit

AFM907N RF High-Power Model ADS Product Model Design Kit

AFM907N 350-520 MHz PCB DXF file

AFM907N 760-870 MHz Reference Circuit Design Files

AFM907N 520 MHz Narrowband PCB DXF file

AFM907N RF Power Electromigration MTTF Calculation Program

Filter By

Support

What do you need help with?

Suggested Links

8 W CW over 136-941 MHz, 7.5 V Wideband Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

Wideband Performance

Narrowband Performance

Load Mismatch/Ruggedness

Buy/Parametrics

Documentation

Filter by

AFM907N 8 W over 136-941 MHz, 7.5 V Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

AFM907N RF High-Power Model AWR Product Model Design Kit

AFM907N RF High-Power Model ADS Product Model Design Kit

AFM907N 350-520 MHz PCB DXF file

AFM907N 760-870 MHz Reference Circuit Design Files

AFM907N 520 MHz Narrowband PCB DXF file

AFM907N RF Power Electromigration MTTF Calculation Program

Filter By

Support

What do you need help with?

Suggested Links

8 W CW over 136-941 MHz, 7.5 V Wideband Airfast^® RF Power LDMOS Transistor