850-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers


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Product Details

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  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • On-Chip Prematching. On-Chip Stabilization.
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.

RF Performance Table

850-940 MHz

Typical Two-Tone Performance: VDD1 = 28 Volts, VDD2 = 25 Volts, IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA, Pout = 35 Watts Avg.
Frequency Gps
850 MHz30.640.1–30.5
900 MHz31.942.4–31.0
940 MHz32.642.1–31.3
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 137 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 1 dB Compression Point 79 Watts CW


Quick reference to our documentation types.

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Design Resources

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Design Files

5 design files

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    MD8IC970N, MD8IC970GN RF High-Power Model ADS Product Model Design Kit

  • Models

    MD8IC970N RF High-Power Model AWR Product Model Design Kit

  • Calculators

    MD8IC970NR1, MD8IC970GNR1 RF Power Electromigration MTTF Calculation Program


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