1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET

MW6S004NT1
The MW6S004NT1 is designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

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Product Details

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Features

  • Typical Two-Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP
    Power Gain: 18 dB
    Drain Efficiency: 33%
    IMD: –34 dBc
  • Typical Two-Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP
    Power Gain: 19 dB
    Drain Efficiency: 33%
    IMD: –39 dBc
  • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • On-Chip RF Feedback for Broadband Stability
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    1
  • Frequency (Max) (MHz)
    2000
  • Supply Voltage (Typ) (V)
    28
  • Die Technology
    LDMOS

Design Resources

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Documentation

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2 documents

Design Files

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3 design files

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