400-2700 MHz, 2.5 W Avg., 28 V Airfast® RF Power LDMOS Transistor

A2T27S020N

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Product Details

Features

  • Greater negative gate-source voltage range for improved Class C operation
  • Designed for digital predistortion error correction systems
  • Universal broadband driver
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    400
  • Frequency (Max) (MHz)
    2700
  • Supply Voltage (Typ) (V)
    28
  • Die Technology
    LDMOS

RF Performance Tables

1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 185 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz20.820.99.4–44.6–9
1840 MHz21.120.99.3–45.6–16
1880 MHz20.720.69.1–45.5–13

2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 185 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz19.520.19.3–46.4–10
2140 MHz19.819.89.0–45.0–13
2170 MHz19.720.18.9–44.9–11

2600 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 185 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2575 MHz17.620.39.3–44.2–8
2605 MHz18.620.49.0–41.3–10
2635 MHz18.020.18.6–40.7–6
1. All data measured in fixture with device soldered to heatsink.

Documentation

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Design Files

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