Design Files
2 design files
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Models
A2G35S160-01S S-Parameters
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Printed Circuit Boards and Schematics
A2G35S160-01S 3500 MHz PCB DXF file
3400-3600 MHz, 32 W Avg., 48 V Airfast® RF Power GaN Transistor
A2G35S160-01S Receive alerts
The A2G35S160-01SR3 32 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3400 to 3600 MHz.
NI-400S-2S Package Image
Product Details
Features
- High Terminal Impedances for Optimal Broadband Performance
- Designed for Digital Predistortion Error Correction Systems
- Optimized for Doherty Applications
- RoHS Compliant
RF Performance Table
3500 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 190 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 3400 MHz | 15.6 | 37.2 | 7.0 | –33.6 | –16 |
| 3500 MHz | 15.7 | 36.7 | 7.2 | –34.1 | –16 |
| 3600 MHz | 15.9 | 38.9 | 7.2 | –33.2 | –13 |
Documentation
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