Design Files
2 design files
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Models
A2G35S200-01S S-Parameters
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Printed Circuit Boards and Schematics
A2G35S200-01S 3500 MHz PCB DXF file
3400-3600 MHz, 40 W Avg., 48 V Airfast® RF Power GaN Transistor
A2G35S200-01S Receive alerts
The A2G35S200-01SR3 40 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3400 to 3600 MHz.
NI-400S-2S Package Image
Product Details
Features
- High Terminal Impedances for Optimal Broadband Performance
- Designed for Digital Predistortion Error Correction Systems
- Optimized for Doherty Applications
- RoHS Compliant
RF Performance Table
3500 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 291 mA, Pout = 40 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 3400 MHz | 14.7 | 32.4 | 7.2 | –34.9 | –10 |
| 3500 MHz | 16.1 | 35.3 | 7.0 | –34.7 | –19 |
| 3600 MHz | 16.1 | 36.7 | 6.6 | –32.8 | –9 |
Documentation
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