3400-3600 MHz, 40 W Avg., 48 V Airfast® RF Power GaN Transistor

A2G35S200-01S

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Product Details

Features

  • High Terminal Impedances for Optimal Broadband Performance
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant

Key Parametrics

  • Frequency (Min) (MHz)
    3400
  • Frequency (Max) (MHz)
    3600
  • Supply Voltage (Typ) (V)
    48
  • Peak Power (Typ) (dBm)
    53.5
  • Peak Power (Typ) (W)
    225
  • Die Technology
    GaN

RF Performance Table

3500 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 291 mA, Pout = 40 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
3400 MHz14.732.47.2–34.9–10
3500 MHz16.135.37.0–34.7–19
3600 MHz16.136.76.6–32.8–9

Design Resources

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Documentation

Quick reference to our documentation types.

3 documents

Design Files

2 design files

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