716-960 MHz, 30 W Avg., 28 V Airfast® RF Power LDMOS Transistor

A2T07D160W04S

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Product Details

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Features

  • Designed for Wide Instantaneous Bandwidth Applications
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.

RF Performance Tables

780 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 450 mA, VGSB = 1.2 Vdc, Pout = 30 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

880 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 450 mA, VGSB = 1.3 Vdc, Pout = 30 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Documentation

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4 documents

Design Resources

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Design Files

1-5 of 6 design files

  • Models

    A2T07D160W04S RF High-Power Model ADS Product Model Design Kit

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    A2T07D160W04SR3 S-Parameters

  • Models

    A2T07D160W04SR3 S-Parameters

  • Printed Circuit Boards and Schematics

    A2T07D160W04S 865-895 MHz PCB DXF file

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