716-960 MHz, 30 W Avg., 28 V Airfast® RF Power LDMOS Transistor

A2T07D160W04S

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Product Details

Features

  • Designed for Wide Instantaneous Bandwidth Applications
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    716
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    28
  • Peak Power (Typ) (dBm)
    52.7
  • Peak Power (Typ) (W)
    186
  • Die Technology
    LDMOS

RF Performance Tables

780 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 450 mA, VGSB = 1.2 Vdc, Pout = 30 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

880 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 450 mA, VGSB = 1.3 Vdc, Pout = 30 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Design Resources

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