MMRF5014H|RF Power GaN on SiC Transistor

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The MMRF5014H 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications.

This part is characterized and performance is guaranteed for applications operating in the 1-2700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

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Data Sheet

Application Notes

Product Details

Features

Decade bandwidth performance
Low thermal resistance
Advanced GaN on SiC, offering high power density
Input matched for extended wideband performance
High ruggedness: > 20:1 VSWR
RoHS compliant
These products are included in our product longevity program with assured supply for a minimum of 15 years after launch.

Ideal for military end-use applications, including the following:
- Narrowband and multi-octave wideband amplifiers
- Radar
- Jammers
- EMC testing

Also suitable for commercial applications, including the following:
- Public mobile radios, including emergency service radios
- Industrial, scientific and medical
- Wideband laboratory amplifiers
- Wireless cellular infrastructure

RF Performance Tables

Typical Narrowband Performance

V_DD = 50 Vdc, I_DQ = 350 mA, T_A = 25°C

Frequency (MHz)	Signal Type	Pout (W)	G_ps (dB)	η_D (%)
2500⁽¹⁾	CW	125 CW	16.0	64.2
2500⁽¹⁾	Pulse (100 µsec, 20% Duty Cycle)	125 Peak	18.0	66.8

Typical Wideband Performance

V_DD = 50 Vdc, T_A = 25°C

Frequency (MHz)	Signal Type	Pout (W)	G_ps⁽²⁾ (dB)	η_D⁽²⁾ (%)
200-2500⁽³⁾	CW	100 CW	12.0	40.0
1300-1900⁽⁴⁾	CW	125 CW	14.5	45.0

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	Pin (W)	Test Voltage	Result
2500⁽¹⁾	Pulse (100 µsec, 20% Duty Cycle)	> 20:1 at All Phase Angles	5.0 Peak (3 dB Overdrive)	50	No Device Degradation

1. Measured in 2500 MHz narrowband test circuit.
2. The values shown are the minimum measured performance numbers across the indicated frequency range.
3. Measured in 200-2500 MHz broadband reference circuit.
4. Measured in 1300-1900 MHz broadband reference circuit.

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

5 documents

Data Sheet
MMRF5014H 125 W CW, 50 V RF Power GaN Data Sheet

PDFRev 3May 25, 2018788.8 KBMMRF5014HEnglish
Application Note
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
Technical Notes
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
Package Information
98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins, NI-360H-2SB

PDFRev ONov 5, 201449.4 KBSOT1791-1English
Supporting Information
MMRF5014H: 125 W CW GaN-on-SiC Transistor

PDFRev 0Nov 23, 2014450.0 KBMMRF5014H_50V_GAN_TRN_SIEnglish

Design Resources

Design Files

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1-5of 6 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

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Models
MMRF5014H RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00154.2 KBMMRF5014H_MDL_ADS

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Models
MMRF5014H RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Sep 20, 2016 00:00:004.2 MBMMRF5014H_MDL_AWR

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Printed Circuit Boards and Schematics
MMRF5014H 200-2500 MHz Reference Circuit Design Files

ZIPRev 0Sep 28, 2019 00:00:0013.2 MBMMRF5014H-200-2500-MHz-Reference-Circuit

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Printed Circuit Boards and Schematics
MMRF5014H 500-2500 MHz Reference Circuit Design Files

ZIPRev 0Sep 28, 2019 00:00:004.0 MBMMRF5014H-500-2500-MHz-Reference-Circuit

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Show All

1-2700 MHz, 125 W CW, 50 V Wideband RF Power GaN on SiC Transistor

Product Details

Features

RF Performance Tables

Typical Narrowband Performance

Typical Wideband Performance

Load Mismatch/Ruggedness

Buy/Parametrics

Documentation

Filter by

MMRF5014H 125 W CW, 50 V RF Power GaN Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins, NI-360H-2SB

MMRF5014H: 125 W CW GaN-on-SiC Transistor

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MMRF5014H RF High-Power Model ADS Product Model Design Kit

MMRF5014H RF High-Power Model AWR Product Model Design Kit

MMRF5014H 200-2500 MHz Reference Circuit Design Files

MMRF5014H 500-2500 MHz Reference Circuit Design Files

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