1-2700 MHz, 125 W CW, 50 V Wideband RF Power GaN on SiC Transistor

MMRF5014H Active

The MMRF5014H 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications.

This part is characterized and performance is guaranteed for applications operating in the 1-2700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

See product image

Features

  • Decade bandwidth performance
  • Low thermal resistance
  • Advanced GaN on SiC, offering high power density
  • Input matched for extended wideband performance
  • High ruggedness: > 20:1 VSWR
  • RoHS compliant
  • These products are included in our product longevity program with assured supply for a minimum of 15 years after launch.
  • Ideal for military end-use applications, including the following:
    • Narrowband and multi-octave wideband amplifiers
    • Radar
    • Jammers
    • EMC testing
  • Also suitable for commercial applications, including the following:
    • Public mobile radios, including emergency service radios
    • Industrial, scientific and medical
    • Wideband laboratory amplifiers
    • Wireless cellular infrastructure

RF Performance Tables

Typical Narrowband Performance

VDD = 50 Vdc, IDQ = 350 mA, TA = 25°C
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
2500(1)CW125 CW16.064.2
2500(1)Pulse (100 µsec,
20% Duty Cycle)		125 Peak18.066.8

Typical Wideband Performance

VDD = 50 Vdc, TA = 25°C
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps(2)
(dB)		 ηD(2)
(%)
200-2500(3)CW100 CW12.040.0
1300-1900(4)CW125 CW14.545.0

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test Voltage Result
2500(1)Pulse
(100 µsec,
20% Duty Cycle)		> 20:1 at All Phase Angles 5.0 Peak
(3 dB
Overdrive)		50No
Device
Degradation
1. Measured in 2500 MHz narrowband test circuit.
2. The values shown are the minimum measured performance numbers across the indicated frequency range.
3. Measured in 200-2500 MHz broadband reference circuit.
4. Measured in 1300-1900 MHz broadband reference circuit.

Buy/Parametrics

‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
N true 0 PSPMMRF5014Hen 5 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Supporting Information Supporting Information t531 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 3 English MMRF5014H 125 watt CW RF power GaN transistor for wideband RF amplifiers targeting military and industrial applications 1430838154488706884344 PSP 788.8 KB None None documents None 1430838154488706884344 /docs/en/data-sheet/MMRF5014H.pdf 788842 /docs/en/data-sheet/MMRF5014H.pdf MMRF5014H documents N N 2017-04-13 MMRF5014H 125 W CW, 50 V RF Power GaN Data Sheet /docs/en/data-sheet/MMRF5014H.pdf /docs/en/data-sheet/MMRF5014H.pdf Data Sheet N 980000996212993340 2024-03-13 pdf N en May 25, 2018 980000996212993340 Data Sheet Y N MMRF5014H 125 W CW, 50 V RF Power GaN Data Sheet Application Note Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note Technical Notes Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 1 4 O English 98ASA00795D, NI-360H-2SB 1415229469957723384286 PSP 49.4 KB None None documents None 1415229469957723384286 /docs/en/package-information/98ASA00795D.pdf 49376 /docs/en/package-information/98ASA00795D.pdf SOT1791-1 documents N N 2016-10-31 98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins, NI-360H-2SB /docs/en/package-information/98ASA00795D.pdf /docs/en/package-information/98ASA00795D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Nov 5, 2014 302435339416912908 Package Information D N 98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins, NI-360H-2SB Supporting Information Supporting Information 1 5 0 English NXP<sup>&#174;</sup> 125 watt CW GaN transistor for wideband RF amplifiers targeting military and industrial applications 1416728611146733706467 PSP 450.0 KB None None documents None 1416728611146733706467 /docs/en/supporting-information/MMRF5014H_50V_GaN_TRN_SI.pdf 449975 /docs/en/supporting-information/MMRF5014H_50V_GaN_TRN_SI.pdf MMRF5014H_50V_GAN_TRN_SI documents N N 2016-10-31 MMRF5014H: 125 W CW GaN-on-SiC Transistor /docs/en/supporting-information/MMRF5014H_50V_GaN_TRN_SI.pdf /docs/en/supporting-information/MMRF5014H_50V_GaN_TRN_SI.pdf Supporting Information N 371282830530968666 2024-03-13 pdf N en Nov 23, 2014 371282830530968666 Supporting Information Y N MMRF5014H: 125 W CW GaN-on-SiC Transistor false 0 MMRF5014H downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 Data Sheet 1 /docs/en/data-sheet/MMRF5014H.pdf 2017-04-13 1430838154488706884344 PSP 1 May 25, 2018 Data Sheet MMRF5014H 125 watt CW RF power GaN transistor for wideband RF amplifiers targeting military and industrial applications None /docs/en/data-sheet/MMRF5014H.pdf English documents 788842 None 980000996212993340 2024-03-13 N /docs/en/data-sheet/MMRF5014H.pdf MMRF5014H 125 W CW, 50 V RF Power GaN Data Sheet /docs/en/data-sheet/MMRF5014H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 3 N N MMRF5014H 125 W CW, 50 V RF Power GaN Data Sheet 788.8 KB MMRF5014H N 1430838154488706884344 Package Information 1 /docs/en/package-information/98ASA00795D.pdf 2016-10-31 1415229469957723384286 PSP 4 Nov 5, 2014 Package Information 98ASA00795D, NI-360H-2SB None /docs/en/package-information/98ASA00795D.pdf English documents 49376 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00795D.pdf 98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins, NI-360H-2SB /docs/en/package-information/98ASA00795D.pdf documents 302435339416912908 Package Information N en None D pdf O N N 98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins, NI-360H-2SB 49.4 KB SOT1791-1 N 1415229469957723384286 Supporting Information 1 /docs/en/supporting-information/MMRF5014H_50V_GaN_TRN_SI.pdf 2016-10-31 1416728611146733706467 PSP 5 Nov 23, 2014 Supporting Information NXP<sup>&#174;</sup> 125 watt CW GaN transistor for wideband RF amplifiers targeting military and industrial applications None /docs/en/supporting-information/MMRF5014H_50V_GaN_TRN_SI.pdf English documents 449975 None 371282830530968666 2024-03-13 N /docs/en/supporting-information/MMRF5014H_50V_GaN_TRN_SI.pdf MMRF5014H: 125 W CW GaN-on-SiC Transistor /docs/en/supporting-information/MMRF5014H_50V_GaN_TRN_SI.pdf documents 371282830530968666 Supporting Information N en None Y pdf 0 N N MMRF5014H: 125 W CW GaN-on-SiC Transistor 450.0 KB MMRF5014H_50V_GAN_TRN_SI N 1416728611146733706467 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

Documentation

Quick reference to our documentation types.

Filters

5 documents

Compact List

Application Note (1)
Data Sheet (1)
Package Information (1)
Supporting Information (1)
Technical Notes (1)

Design Files

Quick reference to our design files types.
Filters

1-5of 6 design files

Show All

Support

What do you need help with?

  • Narrow your search
Search